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Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substratesPETITPREZ, E; GONZALEZ-BORRERO, P. P; LUBYSHEV, D. I et al.Microelectronic engineering. 1998, Vol 43-44, pp 59-65, issn 0167-9317Conference Paper

Multilink structure for fast determination of electromigration threshold productPETITPREZ, E.Microelectronic engineering. 2011, Vol 88, Num 5, pp 610-613, issn 0167-9317, 4 p.Conference Paper

Characterization and impact of reduced copper plating overburden on 45 nm interconnect performancesDUBREUIL, O; CAUBET-HILLOUTOU, V; GUILLAN, J et al.Microelectronic engineering. 2010, Vol 87, Num 3, pp 421-425, issn 0167-9317, 5 p.Conference Paper

Integration and characterization of gas cluster processing for copper interconnects electromigration improvementGRAS, R; GOSSET, L. G; CHEVOLLEAU, T et al.Microelectronic engineering. 2007, Vol 84, Num 11, pp 2675-2680, issn 0167-9317, 6 p.Conference Paper

Self-organized InGaAs quantum dots grown by molecular beam epitaxy on (100), (711)A/B, (511)A/B, (311)A/B, (211)A/B, and (111)A/B oriented GaAsGONZALEZ-BORRERO, P. P; LUBYSHEV, D. I; MAREGA, E. JR et al.Journal of crystal growth. 1996, Vol 169, Num 3, pp 424-428, issn 0022-0248Article

New generation of Self Ionized Plasma copper seed for sub 40 nm nodesGUILLAN, J; HAXAIRE, K; CHHUN, S et al.Microelectronic engineering. 2011, Vol 88, Num 5, pp 697-700, issn 0167-9317, 4 p.Conference Paper

Integration of gas cluster process for copper interconnects reliability improvement and process impact evaluation on BEOL dielectric materialsGRAS, R; GASSET, L. G; FOSSATI, D et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2184-2187, issn 0167-9317, 4 p.Conference Paper

Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substratesGONZALEZ-BORRERO, P. P; LUBYSHEV, D. I; MAREGA, E. JR et al.Superlattices and microstructures. 1998, Vol 23, Num 2, pp 365-368, issn 0749-6036Article

Microstructure and texture analysis of narrow copper line versus widths and annealing for reliability improvementGALAND, R; HAXAIRE, K; ARNAUD, L et al.Microelectronic engineering. 2011, Vol 88, Num 5, pp 661-665, issn 0167-9317, 5 p.Conference Paper

Evaluation of a PECVD advanced barrier (k = 3.7) for 32 nm CMOS technology and belowCHAPELON, L. L; PETITPREZ, E; BRUN, P et al.Microelectronic engineering. 2007, Vol 84, Num 11, pp 2624-2628, issn 0167-9317, 5 p.Conference Paper

Molecular-beam epitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAsGONZALEZ-BORRERO, P. P; MAREGA, E. JR; LUBYSHEV, D. I et al.Journal of crystal growth. 1997, Vol 175-76, pp 765-770, issn 0022-0248, 2Conference Paper